Transcend 110S 1TB PCIe Gen3 NVMe M.2 SSD

Brand : Transcend
Availablity : on order
On Order items usually have to be ordered in and may take bit longer to get them delivered or available for pick up from our Seven Hills, NSW warehouse
Storage Capacity: 1 TB, Storage Type: SSD, Read Speed (MB/s)²: 1700, Write Speed (MB/s)²: 1400, Interface: NVMe PCIe Gen3 x4, Form Factor: M.2, 05 Years Limited Warranty, TS1TMTE110S.
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Product Description

Manufacture # Transcend | Model # TS1TMTE110S


Transcend's PCIe SSD 110S utilizes the PCI Express Gen3 x4 interface supported by the latest NVMe standard, to unleash next-generation performance. The PCIe SSD 110S aims at high-end applications, such as digital audio/video production, gaming, and enterprise use, which require constant processing heavy workloads with no system lags or slowdowns of any kind. Powered by 3D NAND flash memory, the PCIe SSD 110S gives you not only fast transfer speeds but unmatched reliability.



  • Compelling performance for high-end applications
  • Understanding the PCIe interface
  • Understanding the NVMe standard
  • 3D expansion to break through limits
  • Better endurance, higher reliability
  • Transcend SSD Scope software


  • Storage Capacity: 1 TB
  • Storage Type: SSD
  • Read Speed (MB/s)²: 1700
  • Write Speed (MB/s)²: 1400
  • Interface: NVMe PCIe Gen3 x4
  • Form Factor: M.2

Manufacturer Warranty: 05 Years Limited Warranty

Technical Specifications


Storage Capacity Storage capacity refers to how much disk space storage devices provides.
1 TB
Storage Type
Read Speed (MB/s)² Read speed is a measurement of the performance on storage devices.
Write Speed (MB/s)² Write speed is a measurement of the performance on storage devices.
Interface Hard disk drives are accessed over one of a number of bus types, including parallel ATA, Serial ATA (SATA), SCSI, Serial Attached SCSI, and Fibre Channel.
NVMe PCIe Gen3 x4
Form Factor
NAND NAND is a type of flash memory that reduces erase and write times lower than hard drive, and requires less chip area per cell, which allows for more storage density and lower cost.
3D NAND flash
Dimensions (W x H x D)
80 x 3.58 x 22 mm
8 g
Advanced Features
4K Random Read/Write (IOmeter): up to 200,000/250,000 IOPS
Terabytes Written (TBW): 400 TBW
Mean Time Between Failures (MTBF): 2,000,000 hour(s)
Drive Writes Per Day (DWPD): 0.2
Operating Temperature: 0°C (32°F) ~ 70°C (158°F)
Operating Voltage: 3.3V±5%

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