Samsung 860 Evo M.2 500GB V-Nand (2280) SATA III 6GB/SR/W(Max) 550MB/S/5 SSD Drives (MZ-N6E500BW)

SKU : MZ-N6E500BW
Brand : Samsung
This product is either discontinued or we cannot get that from suppliers.
Samsung 860 Evo 500GB M.2 SATA III 6GB/s V-NAND SSD MZ-N6E250BW, 500GB M.2 (2280), Sequential Read (Max) 550MB/s/Write (Max) 520MB/s, 98K/90K IOPS, 150TBW, Samsung MJX Controller, Cache 512MB Low Power DDR4 SDRAM, SATA III 6GB/s, Samsung V-NAND 3bit MLC.   Designed for everyday computing, the Samsung 860 EVO is powered by our latest V-NAND technology and a robust algorithm-based Samsung controller to handle the workloads of mainstream PCs and laptops.
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Product Description

Manufacturer: Samsung | SKU: MZ-N6E250BW

 

Designed for everyday computing, the Samsung 860 EVO is powered by our latest V-NAND technology and a robust algorithm-based Samsung controller to handle the workloads of mainstream PCs and laptops. Get fast, enduring performance with exceptional reliability and expanded compatibility.
 

Features: 

  • Samsung 860 Evo SATA III 6GB/S R/W(Max) 550MB/S/5 SSD Drives (MZ-N6E250BW)
  • Featuring Samsung's latest 64-layer V-NAND technology to handle the workloads of mainstream PCs and laptops
  • Refined everyday computing for business professionals
  • Reliable endurance with an industry warranty up to 2,400 Total Bytes Written (TBW) for 5 years
  • Ideal for high-performance client PC applications.

 

Overview:

  • Device Type: Internal Solid State Drive (SSD)
  • Used For: Consumer
  • Form Factor : M.2 2280
  • Capacity: 500GB
  • Memory Components: 3D NAND
  • Interface: SATA III
  • Controller: MJX
  • Cache: 512MB LPDDR4

 

 

Manufacturer Warranty: 05 Years Limited Warranty

 

 

Technical Specifications

Brand SAMSUNG
Series 860 EVO Series
Model MZ-N6E250BW
Device Type Internal Solid State Drive (SSD)
Used For Consumer
Form Factor  M.2 2280
Capacity 500GB
Memory Components  3D NAND
Interface SATA III
Controller MJX
Cache 512MB LPDDR4
Max Sequential Read Up to 550 MB/s
Max Sequential Write Up to 520 MB/s
4KB Random Read Random (QD1): Up to 10,000 IOPS; Random (QD32): Up to 97,000 IOPS
4KB Random Write Random (QD1): Up to 42,000 IOPS; Random (QD32): Up to 88,000 IOPS
MTBF  1,500,000 hours
Features 1.TBW: 150TB; 2.Data Security: AES 256-bit Full Disk Encryption, TCG/Opal V2.0, Encrypted Drive(IEEE1667); 3.Supporting Features: TRIM (Required OS support), Garbage Collection, S.M.A.R.T
Power Consumption (Idle) 50 mW
Power Consumption (Active) 2.2 W
Operating Temperature 0°C ~ +70°C
Storage Temperature -45°C ~ +85°C
Operating Humidity 5% to 95% RH
Max Shock Resistance 1500G
Max Vibration Resistance 20G
Height 2.30mm
Width 22.00mm
Depth 80.00mm
Weight 80.00g

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