Samsung 990 PRO 4TB PCIe 4.0 NVMe M.2 2280 SSD MZ-V9P4T0BW

Description

Manufacture: Samsung | Model: MZ-V9P4T0BW

MZ-V9P4T0BW

The MZ-V9P4T0BW is a high-performance solid-state drive (SSD) offering exceptional speed and reliability for a variety of applications, including client PCs and game consoles. With a capacity of 4,000GB, it utilizes Samsung's advanced V-NAND 3-bit MLC memory, ensuring outstanding data storage and access speeds. The SSD features the M.2 (2280) form factor and PCIe Gen 4.0 x4 interface with NVMe 2.0, delivering lightning-fast read and write speeds for demanding workloads. Equipped with 1GB of low-power DDR4 cache memory, it enhances overall system performance. The drive also supports AES 256-bit encryption for secure data storage and includes TRIM and S.M.A.R.T. support for maintaining optimal drive health over time.

Key Features:

• Capacity: 4,000GB (1GB = 1 billion bytes by IDEMA; actual usable capacity may vary due to formatting, partitioning, or system usage)
• Form Factor: M.2 (2280)
• Interface: PCIe Gen 4.0 x4, NVMe 2.0
• Dimensions: 80 x 22 x 2.3 mm
• Weight: Max 9.0g
• Storage Memory: Samsung V-NAND 3-bit MLC
• Controller: Samsung in-house Controller
• Cache Memory: 1GB Low Power DDR4 SDRAM
• TRIM Support: Supported
• S.M.A.R.T Support: Supported
• Garbage Collection (GC): Auto Garbage Collection Algorithm
• Encryption Support: AES 256-bit Encryption (Class 0), TCG/Opal IEEE1667 (Encrypted drive)
• Device Sleep Mode Support: Yes
• Sequential Read Speed: Up to 7,450 MB/s (performance may vary depending on system hardware & configuration)
• Sequential Write Speed: Up to 6,900 MB/s (performance may vary depending on system hardware & configuration)
• Random Read (4KB, QD32): Up to 1,600,000 IOPS
• Random Write (4KB, QD32): Up to 1,550,000 IOPS
• Random Read (4KB, QD1): Up to 22,000 IOPS
• Random Write (4KB, QD1): Up to 80,000 IOPS
• Average Power Consumption: 5.5 W (Average), 8.5 W (Maximum - Burst mode)
• Power Consumption (Idle): Max. 55 mW
• Allowable Voltage: 3.3 V ± 5%
• Reliability: 1.5 Million Hours MTBF (Mean Time Between Failures)
• Operating Temperature: 0 – 70°C
• Shock Resistance: 1,500 G at 0.5 ms (Half sine)
• Warranty: 5-Year Limited Warranty or 2400 TBW (Total Bytes Written) Limited Warranty