Sku: MZ-76E500BW
Brand: Samsung
Category: SSD Drives
Availability: On Order
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Samsung 860 Evo SATA III 6GB/S R/W(Max) 550MB/S/52 SSD Drives (MZ-76E500BW), 500 GB, FF 2.5 inch, Interface SATA 6 Gb/s Interface, compatible with SATA 3 Gb/s & SATA 1.5 Gb/s interface, Samsung MJX Controller, TRIM Supported, S.M.A.R.T Supported, Auto Garbage Collection Algorithm, Random Read (4KB, QD32) Up to 98,000/Write Up to 520 MB/s, Reliability (MTBF) 1.5 Million Hours Reliability (MTBF).
The Samsung 860 Evo 500GB 2.5" SSD (MZ-76E500BW) is a reliable, durable, fast-operating SSD that offers numerous high-tech features. These include TurboWrite technology, 3D V-NAND flash memory architecture.
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Manufacturer: Samsung | SKU: MZ-76E500BW
The Samsung 860 Evo 500GB 2.5" SSD (MZ-76E500BW) is a reliable, durable, fast-operating SSD that offers numerous high-tech features. These include TurboWrite technology, 3D V-NAND flash memory architecture, Rapid Mode data processing, advanced encryption and a Dynamic Thermal Guard. In addition, the Samsung 860 Evo 500GB 2.5" SSD is backed by a five-year limited warranty, for ultimate peace of mind.
Features:
Overview:
Manufacturer Warranty: 05 Years Limited Warranty

| Application | Client PCs |
| Capacity | 500 GB (1 GB=1 Billion byte by IDEMA) * Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise) |
| Form Factor | 2.5 inch |
| Interface | SATA 6 Gb/s Interface, compatible with SATA 3 Gb/s & SATA 1.5 Gb/s interface |
| Dimension (WxHxD) | 100 X 69.85 X 6.8 (mm) |
| Weight | Max 50.0g Weight |
| NAND Type | Samsung V-NAND 3bit MLC |
| Controller | Samsung MJX Controller |
| Cache Memory | Samsung 512 MB Low Power DDR4 SDRAM |
| TRIM Support | TRIM Supported |
| S.M.A.R.T Support | S.M.A.R.T Supported |
| GC (Garbage Collection) | Auto Garbage Collection Algorithm |
| Encryption Support | AES 256-bit Encryption (Class 0)TCG/Opal IEEE1667 (Encrypted drive) |
| WWN Support | World Wide Name supported |
| Device Sleep Mode Support | Yes |
| Sequential Read | Up to 550 MB/s Sequential Read |
| Sequential Write | Up to 520 MB/s Sequential Write |
| Random Read (4KB, QD32) | Up to 98,000 IOPS Random Read |
| Random Write (4KB, QD32) | Up to 90,000 IOPS Random Write |
| Random Read (4KB, QD1) | Up to 10,000 IOPS Random Read |
| Random Write (4KB, QD1) | Up to 42,000 IOPS Random Write |
| Power Consumption | *Average: 2.5 W *Maximum: 4.0 W (Burst mode) |
| Reliability (MTBF) | 1.5 Million Hours Reliability (MTBF) |
| Operating Temperature | 0 - 70 ? Operating Temperature |
| Shock | 1,500 G & 0.5 ms (Half sine) |
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