Samsung 970 Pro M.2 512gb 64l 2-bit Mlc V-nand (2280) Nvme R/w(max) 3500m (MZ-V7P512BW)

SKU : MZ-V7P512BW
Brand : Samsung
This product is either discontinued or we cannot get that from suppliers.
Samsung 970 EVO Plus, Reads Up to 3,500 MB/s / Writes Up to 3,300 MB/s, Storage 1TB, M.2 (2280) F F , Samsung V-NAND 3-Bit MLC, Samsung Phoenix Controller, Interface PCIe Gen 3.0 x4, NVMe 1.3, MTBF 1.5 Million Hours.   The Samsung 970 EVO Plus 1TB NVMe SSD (MZ-V7P512BW) is engineered to deliver efficient and reliable storage performance that surpasses previous generation SSDs.
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Product Description

Manufacture # Samsung  | Model # MZ-V7P512BW

 

The Samsung 970 EVO Plus 1TB NVMe SSD (MZ-V7P512BW) is engineered to deliver efficient and reliable storage performance that surpasses previous generation SSDs. Using 3-bit V-NAND technology, as well as an upgraded firmware and SSD storage controller, the Samsung 970 EVO Plus beats other brands in its niche when it comes to speed, storage capacity, durability, and pricing.  It features 1TB of storage and a host of features that give it excellent value for your money.

 

Features: 

  • Samsung Phoenix MZ-V7P512BW Controller
  • Samsung V-NAND 3-bit MLC
  • Samsung’s latest V-NAND technology
  • Dynamic Thermal Guard
  • Intelligent TurboWrite
  • Up to 3,500 MB/s Sequential Read Speeds
  • Up to 3,300 MB/s Sequential Write Speeds.

 

Overview:

  • Form Factor: M.2 2280
  • Capacity: 1TB
  • Memory Components: V-NAND 3-bit MLC
  • Interface: PCIe Gen 3.0 x4, NVMe 1.3
  • Controller: Samsung Phoenix
  • Cache: Samsung 1GB Low Power DDR4 SDRAM

 

Manufacturer Warranty: 05 Years Limited Warranty

Technical Specifications

Brand SAMSUNG
Series 970 EVO PLUS
Model MZ-V7P512BW
Device Type Internal Solid State Drive (SSD)
Used For Consumer
Form Factor  M.2 2280
Capacity 1TB
Memory Components  V-NAND 3-bit MLC
Interface PCIe Gen 3.0 x4, NVMe 1.3
Controller Samsung Phoenix
Cache Samsung 1GB Low Power DDR4 SDRAM
Max Sequential Read Up to 3500 MBps
Max Sequential Write Up to 3300 MBps
4KB Random Read QD32: Up to 600,000 IOPS
QD1: Up to 19,000 IOPS
4KB Random Write QD32: Up to 550,000 IOPS
QD1: Up to 60,000 IOPS
MTBF  1,500,000 hours
Power Consumption (Idle) Max. 30 mW
Power Consumption (Active) Average: 6W
Maximum: 9W (Burst mode)
Operating Temperature 0°C ~ +70°C
Max Shock Resistance 1,500G & 0.5 ms (Half sine)
Height 2.38mm
Width 22.15mm
Depth 80.15mm
Weight 8.00g

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